| Part Number | PEMB4,115 | PEMD4,115 |
|---|---|---|
| Manufacturer | NXP USA Inc. | Nexperia USA Inc. |
| Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
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| Product Status | Active | Not For New Designs |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V | 50V |
| Resistor - Base (R1) | 10kOhms | 10kOhms |
| Resistor - Emitter Base (R2) | - | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V | 200 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA | 1µA |
| Frequency - Transition | - | - |
| Power - Max | 300mW | 300mW |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Supplier Device Package | SOT-666 | SOT-666 |