| Part Number | PDTD123EQAZ | PDTD143EQAZ |
|---|---|---|
| Manufacturer | Nexperia USA Inc. | Nexperia USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
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| Product Status | Active | Active |
| Transistor Type | - | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | - | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | - | 50 V |
| Resistor - Base (R1) | - | 4.7 kOhms |
| Resistor - Emitter Base (R2) | - | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | 60 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | - | 100mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | - | 500nA |
| Frequency - Transition | - | 210 MHz |
| Power - Max | - | 325 mW |
| Mounting Type | - | Surface Mount |
| Package / Case | - | 3-XDFN Exposed Pad |
| Supplier Device Package | - | DFN1010D-3 |