PDTC144EQC-QZ vs PDTC143EQC-QZ

Product Attributes

Part Number PDTC144EQC-QZ PDTC143EQC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTC144EQC-QZ PDTC143EQC-QZ
Product Status Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 47 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA 1µA
Frequency - Transition 230 MHz 230 MHz
Power - Max 360 mW -
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3