PDTC124TT,215 vs PDTC123TT,215

Product Attributes

Part Number PDTC124TT,215 PDTC123TT,215
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTC124TT,215 PDTC123TT,215
Product Status Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 22 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition - -
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB SOT-23