| Part Number | PDTC115EMB,315 | PDTC115TMB,315 |
|---|---|---|
| Manufacturer | NXP Semiconductors | Nexperia USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
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| Product Status | Active | Active |
| Transistor Type | NPN - Pre-Biased | - |
| Current - Collector (Ic) (Max) | 20 mA | - |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | - |
| Resistor - Base (R1) | 100 kOhms | - |
| Resistor - Emitter Base (R2) | 100 kOhms | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V | - |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA | - |
| Current - Collector Cutoff (Max) | 1µA | - |
| Frequency - Transition | 230 MHz | - |
| Power - Max | 250 mW | - |
| Mounting Type | Surface Mount | - |
| Package / Case | SC-101, SOT-883 | - |
| Supplier Device Package | DFN1006B-3 | - |