PDTC115EM,315 vs PDTC114EM,315

Product Attributes

Part Number PDTC115EM,315 PDTC114EM,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTC115EM,315 PDTC114EM,315
Product Status Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 20 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 100 kOhms 10 kOhms
Resistor - Emitter Base (R2) 100 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition - -
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case SC-101, SOT-883 SC-101, SOT-883
Supplier Device Package SOT-883 SOT-883