PDTC114YM,315 vs PDTC114YM315

Product Attributes

Part Number PDTC114YM,315 PDTC114YM315
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTC114YM,315 PDTC114YM315
Product Status Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 5V 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition - 230 MHz
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case SC-101, SOT-883 SC-101, SOT-883
Supplier Device Package SOT-883 DFN1006-3