PDTC114TEF,115 vs PDTC114YEF,115

Product Attributes

Part Number PDTC114TEF,115 PDTC114YEF,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTC114TEF,115 PDTC114YEF,115
Product Status Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) - 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition - -
Power - Max 150 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case SC-89, SOT-490 SC-89, SOT-490
Supplier Device Package SC-89 SC-89