PDTC114TMB,315 vs PDTC114YMB,315

Product Attributes

Part Number PDTC114TMB,315 PDTC114YMB,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTC114TMB,315 PDTC114YMB,315
Product Status Active Active
Transistor Type - NPN - Pre-Biased
Current - Collector (Ic) (Max) - 100 mA
Voltage - Collector Emitter Breakdown (Max) - 50 V
Resistor - Base (R1) - 10 kOhms
Resistor - Emitter Base (R2) - 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce - 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic - 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) - 1µA
Frequency - Transition - 230 MHz
Power - Max - 250 mW
Mounting Type - Surface Mount
Package / Case - 3-XFDFN
Supplier Device Package - DFN1006B-3