PDTC114EU,115 vs PDTC114EK,115

Product Attributes

Part Number PDTC114EU,115 PDTC114EK,115
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTC114EU,115 PDTC114EK,115
Product Status Active Active
Transistor Type NPN - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V -
Resistor - Base (R1) 10 kOhms -
Resistor - Emitter Base (R2) 10 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V -
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA -
Current - Collector Cutoff (Max) 1µA -
Frequency - Transition - -
Power - Max 200 mW -
Mounting Type Surface Mount -
Package / Case SC-70, SOT-323 -
Supplier Device Package SOT-323 -