Part Number | PDTC114EK,115 | PDTC114EE,115 |
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Manufacturer | NXP USA Inc. | NXP USA Inc. |
Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
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Product Status | Active | Obsolete |
Transistor Type | - | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | - | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | - | 50 V |
Resistor - Base (R1) | - | 10 kOhms |
Resistor - Emitter Base (R2) | - | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | - | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | - | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | - | 1µA |
Frequency - Transition | - | 230 MHz |
Power - Max | - | 150 mW |
Mounting Type | - | Surface Mount |
Package / Case | - | SC-75, SOT-416 |
Supplier Device Package | - | SC-75 |