PDTC114EK,115 vs PDTC114EE,115

Product Attributes

Part Number PDTC114EK,115 PDTC114EE,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTC114EK,115 PDTC114EE,115
Product Status Active Obsolete
Transistor Type - NPN - Pre-Biased
Current - Collector (Ic) (Max) - 100 mA
Voltage - Collector Emitter Breakdown (Max) - 50 V
Resistor - Base (R1) - 10 kOhms
Resistor - Emitter Base (R2) - 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce - 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic - 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) - 1µA
Frequency - Transition - 230 MHz
Power - Max - 150 mW
Mounting Type - Surface Mount
Package / Case - SC-75, SOT-416
Supplier Device Package - SC-75