PDTB143XTR vs PDTB143ETR

Product Attributes

Part Number PDTB143XTR PDTB143ETR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTB143XTR PDTB143ETR
Product Status Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V 60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition 140 MHz 140 MHz
Power - Max 320 mW 320 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB