| Part Number | PDTB123ES,126 | PDTB123TS,126 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | PNP - Pre-Biased | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 500 mA | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V |
| Resistor - Base (R1) | 2.2 kOhms | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V | 100 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA | 500nA |
| Frequency - Transition | - | - |
| Power - Max | 500 mW | 500 mW |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 | TO-92-3 |