PDTA144EQCZ vs PDTA144EQAZ

Product Attributes

Part Number PDTA144EQCZ PDTA144EQAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTA144EQCZ PDTA144EQAZ
Product Status Obsolete Active
Transistor Type PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V -
Resistor - Base (R1) 47 kOhms -
Resistor - Emitter Base (R2) 47 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V -
Vce Saturation (Max) @ Ib, Ic 100mV @ 500µA, 10mA -
Current - Collector Cutoff (Max) 100nA -
Frequency - Transition 180 MHz -
Power - Max 360 mW -
Mounting Type Surface Mount, Wettable Flank -
Package / Case 3-XDFN Exposed Pad -
Supplier Device Package DFN1412D-3 -