PDTA144VE,115 vs PDTA144EE,115

Product Attributes

Part Number PDTA144VE,115 PDTA144EE,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTA144VE,115 PDTA144EE,115
Product Status Obsolete Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 47 kOhms 47 kOhms
Resistor - Emitter Base (R2) 10 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 5mA, 5V 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 100nA (ICBO)
Frequency - Transition - -
Power - Max 150 mW 150 mW
Mounting Type Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75 SC-75