PDTA143TMB,315 vs PDTA143TM,315

Product Attributes

Part Number PDTA143TMB,315 PDTA143TM,315
Manufacturer NXP USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTA143TMB,315 PDTA143TM,315
Product Status Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition 180 MHz -
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case SC-101, SOT-883 SC-101, SOT-883
Supplier Device Package DFN1006B-3 SOT-883