PDTA124EQBZ vs PDTA124EQAZ

Product Attributes

Part Number PDTA124EQBZ PDTA124EQAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTA124EQBZ PDTA124EQAZ
Product Status Obsolete Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 22 kOhms 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA 1µA
Frequency - Transition 180 MHz 180 MHz
Power - Max 340 mW 280 mW
Mounting Type Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1010D-3