| Part Number | PDTA123JQC-QZ | PDTA123JQB-QZ |
|---|---|---|
| Manufacturer | Nexperia USA Inc. | Nexperia USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
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| Product Status | Active | Active |
| Transistor Type | PNP - Pre-Biased | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V |
| Resistor - Base (R1) | 2.2 kOhms | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V | 100 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA | 100nA |
| Frequency - Transition | 180 MHz | 180 MHz |
| Power - Max | 360 mW | 340 mW |
| Mounting Type | Surface Mount, Wettable Flank | Surface Mount, Wettable Flank |
| Package / Case | 3-XDFN Exposed Pad | 3-XDFN Exposed Pad |
| Supplier Device Package | DFN1412D-3 | DFN1110D-3 |