PDTA123JU,115 vs PDTA123JE,115

Product Attributes

Part Number PDTA123JU,115 PDTA123JE,115
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTA123JU,115 PDTA123JE,115
Product Status Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10µA, 5V 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO) 1µA
Frequency - Transition - -
Power - Max 200 mW 150 mW
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-75, SOT-416
Supplier Device Package SOT-323 SC-75