| Part Number | PDTA143EMB,315 | PDTA123EMB,315 |
|---|---|---|
| Manufacturer | NXP USA Inc. | Nexperia USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | PNP | - |
| Current - Collector (Ic) (Max) | 100 mA | - |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | - |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | - |
| Current - Collector Cutoff (Max) | 1µA | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V | - |
| Power - Max | 250 mW | - |
| Frequency - Transition | 180MHz | - |
| Operating Temperature | - | - |
| Mounting Type | Surface Mount | - |
| Package / Case | SC-101, SOT-883 | - |
| Supplier Device Package | DFN1006B-3 | - |