PDTA115EE,115 vs PDTA115EK,115

Product Attributes

Part Number PDTA115EE,115 PDTA115EK,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTA115EE,115 PDTA115EK,115
Product Status Obsolete Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 20 mA 20 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 100 kOhms 100 kOhms
Resistor - Emitter Base (R2) 100 kOhms 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition - -
Power - Max 150 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case SC-75, SOT-416 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-75 SMT3; MPAK