| Part Number | PDTA114YQBZ | PDTA114YQAZ |
|---|---|---|
| Manufacturer | Nexperia USA Inc. | Nexperia USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
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| Product Status | Obsolete | Active |
| Transistor Type | PNP - Pre-Biased | - |
| Current - Collector (Ic) (Max) | 100 mA | - |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | - |
| Resistor - Base (R1) | 10 kOhms | - |
| Resistor - Emitter Base (R2) | 47 kOhms | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V | - |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA | - |
| Current - Collector Cutoff (Max) | 100nA | - |
| Frequency - Transition | 180 MHz | - |
| Power - Max | 340 mW | - |
| Mounting Type | Surface Mount, Wettable Flank | - |
| Package / Case | 3-XDFN Exposed Pad | - |
| Supplier Device Package | DFN1110D-3 | - |