| Part Number | PDTA115EMB,315 | PDTA113EMB,315 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
|
|
|
| Product Status | Active | Active |
| Transistor Type | PNP - Pre-Biased | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 20 mA | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V |
| Resistor - Base (R1) | 100 kOhms | 1 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms | 1 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V | 30 @ 40mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA | 150mV @ 1.5mA, 30mA |
| Current - Collector Cutoff (Max) | 1µA | 100nA (ICBO) |
| Frequency - Transition | 180 MHz | 180 MHz |
| Power - Max | 250 mW | 250 mW |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SC-101, SOT-883 | SC-101, SOT-883 |
| Supplier Device Package | DFN1006B-3 | DFN1006B-3 |