| Part Number | PBSS8110AS,126 | PBSS9110AS,126 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | PNP |
| Current - Collector (Ic) (Max) | 1 A | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 100mA, 1A | 320mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 250mA, 10V | 150 @ 500mA, 5V |
| Power - Max | 830 mW | 830 mW |
| Frequency - Transition | 100MHz | 100MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 | TO-92-3 |