PBSS5630PA,115 vs PBSS5620PA,115

Product Attributes

Part Number PBSS5630PA,115 PBSS5620PA,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS5630PA,115 PBSS5620PA,115
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 6 A 6 A
Voltage - Collector Emitter Breakdown (Max) 30 V 20 V
Vce Saturation (Max) @ Ib, Ic 350mV @ 300mA, 6A 350mV @ 300mA, 6A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 190 @ 2A, 2V 190 @ 2A, 2V
Power - Max 2.1 W 2.1 W
Frequency - Transition 80MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-PowerUDFN 3-PowerUDFN
Supplier Device Package 3-HUSON (2x2) 3-HUSON (2x2)