PBSS5330PA,115 vs PBSS5630PA,115

Product Attributes

Part Number PBSS5330PA,115 PBSS5630PA,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS5330PA,115 PBSS5630PA,115
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 3 A 6 A
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 320mV @ 300mA, 3A 350mV @ 300mA, 6A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 175 @ 1A, 2V 190 @ 2A, 2V
Power - Max 2.1 W 2.1 W
Frequency - Transition 165MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-PowerUDFN 3-PowerUDFN
Supplier Device Package 3-HUSON (2x2) 3-HUSON (2x2)