PBSS5560PA,115 vs PBSS5580PA,115

Product Attributes

Part Number PBSS5560PA,115 PBSS5580PA,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS5560PA,115 PBSS5580PA,115
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 5 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 450mV @ 250mA, 5A 420mV @ 200mA, 4A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A, 2V 140 @ 2A, 2V
Power - Max 2.1 W 2.1 W
Frequency - Transition 90MHz 110MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-PowerUDFN 3-PowerUDFN
Supplier Device Package 3-HUSON (2x2) 3-HUSON (2x2)