| Part Number | PBSS4350S,126 | PBSS5350S,126 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | PNP |
| Current - Collector (Ic) (Max) | 3 A | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 290mV @ 200mA, 2A | 300mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V | 100 @ 2A, 2V |
| Power - Max | 830 mW | 830 mW |
| Frequency - Transition | 100MHz | 100MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 | TO-92-3 |