PBSS5330PA,115 vs PBSS5330PAS115

Product Attributes

Part Number PBSS5330PA,115 PBSS5330PAS115
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS5330PA,115 PBSS5330PAS115
Product Status Active Active
Transistor Type PNP -
Current - Collector (Ic) (Max) 3 A -
Voltage - Collector Emitter Breakdown (Max) 30 V -
Vce Saturation (Max) @ Ib, Ic 320mV @ 300mA, 3A -
Current - Collector Cutoff (Max) 100nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 175 @ 1A, 2V -
Power - Max 2.1 W -
Frequency - Transition 165MHz -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case 3-PowerUDFN -
Supplier Device Package 3-HUSON (2x2) -