Part Number | PBSS5260QAZ | PBSS4260QAZ |
---|---|---|
Manufacturer | Nexperia USA Inc. | Nexperia USA Inc. |
Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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Product Status | Active | Active |
Transistor Type | PNP | NPN |
Current - Collector (Ic) (Max) | 1.7 A | 2 A |
Voltage - Collector Emitter Breakdown (Max) | 60 V | 60 V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A | 190mV @ 50mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1.7A, 2V | 40 @ 2A, 2V |
Power - Max | 325 mW | 325 mW |
Frequency - Transition | 150MHz | 180MHz |
Operating Temperature | 150°C (TJ) | 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | 3-XDFN Exposed Pad | 3-XDFN Exposed Pad |
Supplier Device Package | DFN1010D-3 | DFN1010D-3 |