PBSS5130PAP,115 vs PBSS5230PAP,115

Product Attributes

Part Number PBSS5130PAP,115 PBSS5230PAP,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
PBSS5130PAP,115 PBSS5230PAP,115
Product Status Active Active
Transistor Type 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 1A 2A
Voltage - Collector Emitter Breakdown (Max) 30V 30V
Vce Saturation (Max) @ Ib, Ic 280mV @ 50mA, 1A 420mv @ 100mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 500mA, 2V 160 @ 1A, 2V
Power - Max 510mW 510mW
Frequency - Transition 125MHz 95MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2) 6-HUSON (2x2)