PBSS5220PAPSX vs PBSS5260PAPSX

Product Attributes

Part Number PBSS5220PAPSX PBSS5260PAPSX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
PBSS5220PAPSX PBSS5260PAPSX
Product Status Active Active
Transistor Type 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 2A 2A
Voltage - Collector Emitter Breakdown (Max) 20V 60V
Vce Saturation (Max) @ Ib, Ic 390mV @ 200mA, 2A 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A, 2V 110 @ 1A, 2V
Power - Max 370mW 370mW
Frequency - Transition 95MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad
Supplier Device Package DFN2020D-6 DFN2020D-6