PBSS5240V,115 vs PBSS5140V,115

Product Attributes

Part Number PBSS5240V,115 PBSS5140V,115
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS5240V,115 PBSS5140V,115
Product Status Not For New Designs Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 1.8 A 1 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 530mV @ 200mA, 2A 310mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA, 5V 300 @ 100mA, 5V
Power - Max 900 mW 500 mW
Frequency - Transition 150MHz 150MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-666 SOT-666