| Part Number | PBSS5130QAZ | PBSS5230QAZ |
|---|---|---|
| Manufacturer | Nexperia USA Inc. | NXP Semiconductors |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | PNP | PNP |
| Current - Collector (Ic) (Max) | 1 A | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | 30 V |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 100mA, 1A | 210mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 1A, 2V | 60 @ 2A, 2V |
| Power - Max | 325 mW | 325 mW |
| Frequency - Transition | 170MHz | 170MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 3-XDFN Exposed Pad | 3-XDFN Exposed Pad |
| Supplier Device Package | DFN1010D-3 | DFN1010D-3 |