PBSS5130QAZ vs PBSS5230QAZ

Product Attributes

Part Number PBSS5130QAZ PBSS5230QAZ
Manufacturer Nexperia USA Inc. NXP Semiconductors
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS5130QAZ PBSS5230QAZ
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 1 A 2 A
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 240mV @ 100mA, 1A 210mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 130 @ 1A, 2V 60 @ 2A, 2V
Power - Max 325 mW 325 mW
Frequency - Transition 170MHz 170MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3 DFN1010D-3