PBSS4612PA,115 vs PBSS5612PA,115

Product Attributes

Part Number PBSS4612PA,115 PBSS5612PA,115
Manufacturer Nexperia USA Inc. NXP Semiconductors
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS4612PA,115 PBSS5612PA,115
Product Status Obsolete Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 6 A 6 A
Voltage - Collector Emitter Breakdown (Max) 12 V 12 V
Vce Saturation (Max) @ Ib, Ic 275mV @ 300mA, 6A 300mV @ 300mA, 6A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 260 @ 2A, 2V 190 @ 2A, 2V
Power - Max 2.1 W 2.1 W
Frequency - Transition 80MHz 60MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-PowerUDFN 3-PowerUDFN
Supplier Device Package 3-HUSON (2x2) 3-HUSON (2x2)