PBSS4230PANP,115 vs PBSS4230PAN,115

Product Attributes

Part Number PBSS4230PANP,115 PBSS4230PAN,115
Manufacturer NXP USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
PBSS4230PANP,115 PBSS4230PAN,115
Product Status Active Active
Transistor Type NPN, PNP -
Current - Collector (Ic) (Max) 2A 2A
Voltage - Collector Emitter Breakdown (Max) 30V 30V
Vce Saturation (Max) @ Ib, Ic 290mV @ 200mA, 2A 290mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V 200 @ 1A, 2V
Power - Max 510mW 510mW
Frequency - Transition 120MHz 120MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2) 6-HUSON (2x2)