PBSS4130QAZ vs PBSS4160QAZ

Product Attributes

Part Number PBSS4130QAZ PBSS4160QAZ
Manufacturer NXP Semiconductors Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS4130QAZ PBSS4160QAZ
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 30 V 60 V
Vce Saturation (Max) @ Ib, Ic 245mV @ 50mA, 1A 245mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V 85 @ 1A, 2V
Power - Max 325 mW 1 W
Frequency - Transition 190MHz 180MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3 DFN1010D-3