PBSS4160PANPSX vs PBSS4160PANSX

Product Attributes

Part Number PBSS4160PANPSX PBSS4160PANSX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
PBSS4160PANPSX PBSS4160PANSX
Product Status Active Active
Transistor Type NPN, PNP 2 NPN (Dual)
Current - Collector (Ic) (Max) 1A 1A
Voltage - Collector Emitter Breakdown (Max) 60V 60V
Vce Saturation (Max) @ Ib, Ic 120mV @ 50mA, 500mA, 340mV @ 100mA, 1A 120mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 2V / 120 @ 500mA, 2V 150 @ 500mA, 2V
Power - Max 370mW 370mW
Frequency - Transition 175MHz, 125MHz 175MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad
Supplier Device Package DFN2020D-6 DFN2020D-6