PBSS4160V,115 vs PBSS4160K,115

Product Attributes

Part Number PBSS4160V,115 PBSS4160K,115
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS4160V,115 PBSS4160K,115
Product Status Not For New Designs Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 900 mA 750 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100mA, 1A 280mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 5V 200 @ 500mA, 5V
Power - Max 500 mW 425 mW
Frequency - Transition 220MHz 220MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-666 SMT3; MPAK