PBSS4160V,115 vs PBSS4140V,115

Product Attributes

Part Number PBSS4160V,115 PBSS4140V,115
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS4160V,115 PBSS4140V,115
Product Status Not For New Designs Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 900 mA 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 40 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100mA, 1A 440mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 5V 300 @ 500mA, 5V
Power - Max 500 mW 500 mW
Frequency - Transition 220MHz 150MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-666 SOT-666