PBSS3540E,115 vs PBSS2540E,115

Product Attributes

Part Number PBSS3540E,115 PBSS2540E,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS3540E,115 PBSS2540E,115
Product Status Obsolete Obsolete
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 500mA 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA, 2V 100 @ 100mA, 2V
Power - Max 250 mW 250 mW
Frequency - Transition 300MHz 450MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75 SC-75