PBSS302NX,115 vs PBSS306NX,115

Product Attributes

Part Number PBSS302NX,115 PBSS306NX,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS302NX,115 PBSS306NX,115
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 5.3 A 4.5 A
Voltage - Collector Emitter Breakdown (Max) 20 V 100 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 265mA, 5.3A 245mV @ 225mA, 4.5A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2A, 2V 100 @ 2A, 2V
Power - Max 2.1 W 2.1 W
Frequency - Transition 140MHz 110MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-89