PBSS302ND,115 vs PBSS302NX,115

Product Attributes

Part Number PBSS302ND,115 PBSS302NX,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
PBSS302ND,115 PBSS302NX,115
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 4 A 5.3 A
Voltage - Collector Emitter Breakdown (Max) 40 V 20 V
Vce Saturation (Max) @ Ib, Ic 450mV @ 600mA, 6A 200mV @ 265mA, 5.3A
Current - Collector Cutoff (Max) 100nA 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2A, 2V 250 @ 2A, 2V
Power - Max 1.1 W 2.1 W
Frequency - Transition 150MHz 140MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-74, SOT-457 TO-243AA
Supplier Device Package 6-TSOP SOT-89