PBRP113ET,215 vs PBRN113ET,215

Product Attributes

Part Number PBRP113ET,215 PBRN113ET,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
PBRP113ET,215 PBRN113ET,215
Product Status Active Active
Transistor Type PNP - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Resistor - Base (R1) 1 kOhms 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 130 @ 300mA, 5V 180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic 750mV @ 6mA, 600mA 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB