| Part Number | PBRN113ES,126 | PBRN113ZS,126 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN - Pre-Biased | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 800 mA | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V | 40 V |
| Resistor - Base (R1) | 1 kOhms | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 300mA, 5V | 500 @ 300mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA | 1.15V @ 8mA, 800mA |
| Current - Collector Cutoff (Max) | 500nA | 500nA |
| Frequency - Transition | - | - |
| Power - Max | 700 mW | 700 mW |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 | TO-92-3 |