| Part Number | PBRN113EK,115 | PBRN123EK,115 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN - Pre-Biased | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 600 mA | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V | 40 V |
| Resistor - Base (R1) | 1 kOhms | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms | 2.2 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 300mA, 5V | 280 @ 300mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA | 1.15V @ 8mA, 800mA |
| Current - Collector Cutoff (Max) | 500nA | 500nA |
| Frequency - Transition | - | - |
| Power - Max | 250 mW | 250 mW |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SMT3; MPAK | SMT3; MPAK |