PBLS6002D,115 vs PBLS6005D,115

Product Attributes

Part Number PBLS6002D,115 PBLS6005D,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
PBLS6002D,115 PBLS6005D,115
Product Status Active Active
Transistor Type 1 NPN Pre-Biased, 1 PNP -
Current - Collector (Ic) (Max) 100mA, 700mA -
Voltage - Collector Emitter Breakdown (Max) 50V, 60V -
Resistor - Base (R1) 4.7kOhms -
Resistor - Emitter Base (R2) 4.7kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V / 150 @ 500mA, 5V -
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A -
Current - Collector Cutoff (Max) 1µA, 100nA -
Frequency - Transition 185MHz -
Power - Max 600mW -
Mounting Type Surface Mount -
Package / Case SC-74, SOT-457 -
Supplier Device Package 6-TSOP -