PBLS2001S,115 vs PBLS2002S,115

Product Attributes

Part Number PBLS2001S,115 PBLS2002S,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
PBLS2001S,115 PBLS2002S,115
Product Status Obsolete Obsolete
Transistor Type 1 NPN Pre-Biased, 1 PNP 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) 100mA, 3A 100mA, 3A
Voltage - Collector Emitter Breakdown (Max) 50V, 20V 50V, 20V
Resistor - Base (R1) 2.2kOhms 4.7kOhms
Resistor - Emitter Base (R2) 2.2kOhms 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V / 150 @ 2A, 2V 30 @ 10mA, 5V / 150 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
Current - Collector Cutoff (Max) 1µA, 100nA 1µA, 100nA
Frequency - Transition 100MHz 100MHz
Power - Max 1.5W 1.5W
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO