PBLS1501V,115 vs PBLS1503V,115

Product Attributes

Part Number PBLS1501V,115 PBLS1503V,115
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
PBLS1501V,115 PBLS1503V,115
Product Status Obsolete Active
Transistor Type 1 NPN Pre-Biased, 1 PNP -
Current - Collector (Ic) (Max) 100mA, 500mA -
Voltage - Collector Emitter Breakdown (Max) 50V, 15V -
Resistor - Base (R1) 2.2kOhms -
Resistor - Emitter Base (R2) 2.2kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V / 150 @ 100mA, 2V -
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) 1µA, 100nA -
Frequency - Transition 280MHz -
Power - Max 300mW -
Mounting Type Surface Mount -
Package / Case SOT-563, SOT-666 -
Supplier Device Package SOT-666 -