| Part Number | PBLS1503Y,115 | PBLS1502Y,115 |
|---|---|---|
| Manufacturer | NXP Semiconductors | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
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| Product Status | Active | Active |
| Transistor Type | - | 1 NPN Pre-Biased, 1 PNP |
| Current - Collector (Ic) (Max) | - | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | - | 50V, 15V |
| Resistor - Base (R1) | - | 4.7kOhms |
| Resistor - Emitter Base (R2) | - | 4.7kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | 30 @ 10mA, 5V / 150 @ 100mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | - | 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - | 1µA, 100nA |
| Frequency - Transition | - | 280MHz |
| Power - Max | - | 300mW |
| Mounting Type | - | Surface Mount |
| Package / Case | - | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | - | SOT-363 |